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| APTGT150TA60P Triple phase leg Trench + Field Stop IGBT(R) Power Module VBUS1 VBUS2 VBUS3 VCES = 600V IC = 150A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control W G1 G3 G5 E1 U E3 V E5 G2 G4 G6 E2 0/VBUS1 E4 0/VBUS2 E6 0/VBUS3 Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Very low (12mm) profile * Each leg can be easily paralleled to achieve a phase leg of three times the current capability * Module can be configured as a three phase bridge * Module can be configured as a boost followed by a full bridge Max ratings 600 225 150 350 20 480 300A @ 550V Unit V APTGT150TA60P - Rev 0 May, 2005 VBUS 1 VBUS 2 VBUS 3 G1 0/VBUS 1 E1 E2 G2 0/VBUS 2 G3 E3 E4 G4 0/VBUS 3 G5 E5 E6 G6 U V W Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C A V W Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-5 APTGT150TA60P All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 150A Tj = 150C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 150A R G = 6.8 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 150A R G = 6.8 Min Typ 9200 580 270 115 45 225 55 130 50 300 70 2.6 5.3 Max Unit pF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF trr Qrr Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions VR=600V 50% duty cycle Min 600 Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Typ Max 250 500 Unit V A A IF = 150A VGE = 0V IF = 150A VR = 300V di/dt =2100A/s 150 1.6 1.5 130 225 6.9 14.5 2 V ns C APTGT150TA60P - Rev 0 May, 2005 APT website - http://www.advancedpower.com 2-5 APTGT150TA60P Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 3 Min Typ Max 0.31 0.52 175 125 100 5 250 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M6 Package outline (dimensions in mm) 5 places (3:1) APT website - http://www.advancedpower.com 3-5 APTGT150TA60P - Rev 0 May, 2005 APTGT150TA60P Typical Performance Curve 300 250 T J=125C Output Characteristics (VGE =15V) TJ=25C Output Characteristics 300 TJ = 150C VGE =19V 250 TJ=150C IC (A) 200 150 100 50 0 0 0.5 1 T J=25C 200 IC (A) 150 100 V GE=13V VGE =15V VGE =9V 50 0 1.5 VCE (V) 2 2.5 3 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 300 250 200 150 100 50 0 5 Transfert Characteristics 10 T J=25C Energy losses vs Collector Current VCE = 300V VGE = 15V RG = 6.8 TJ = 150C Eoff Eon 8 E (mJ) 6 4 IC (A) T J=125C TJ =150C T J=25C Er 2 Eon 0 11 12 0 50 100 150 IC (A) Reverse Bias Safe Operating Area 350 Eon 6 7 8 9 10 200 250 300 VGE (V) Switching Energy Losses vs Gate Resistance 20 16 E (mJ) 12 8 4 0 5 10 15 20 25 30 35 Gate Resistance (ohms) 40 Eoff Eon Er Eoff VCE = 300V VGE =15V IC = 150A T J = 150C 300 250 IC (A) 200 150 100 50 0 0 100 200 300 400 V CE (V) 500 600 700 VGE=15V T J=150C RG=6.8 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 IGBT 0.05 0 0.00001 Rectangular Pulse Duration in Seconds APT website - http://www.advancedpower.com 4-5 APTGT150TA60P - Rev 0 May, 2005 APTGT150TA60P Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 ZVS ZCS VCE=300V D=50% RG=6.8 TJ =150C Forward Characteristic of diode 300 250 200 IC (A) 150 100 50 TJ =25C TJ =125C T J=150C Tc=85C 60 40 20 0 0 50 100 IC (A) 150 200 Hard switching 0 0 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Diode 0.05 0 0.00001 Rectangular Pulse Duration in Seconds APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 5-5 APTGT150TA60P - Rev 0 May, 2005 |
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